Datasheet4U Logo Datasheet4U.com

RB751V-40 - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

General Description

Cathode Anode 12 S8 Top View Marking Code: "S8" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range Symbol V

Key Features

  • Small surface mounting type.
  • Low reverse current and low forward voltage.
  • High reliability.

📥 Download Datasheet

Datasheet Details

Part number RB751V-40
Manufacturer SEMTECH
File Size 121.51 KB
Description SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Datasheet download datasheet RB751V-40 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RB751V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features • Small surface mounting type • Low reverse current and low forward voltage • High reliability Applications • High speed switching PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 S8 Top View Marking Code: "S8" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.