RB751V-40 - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

Product Overview

SEMTECH

Datasheet Details

Part number	RB751V-40
Manufacturer	SEMTECH
File Size	121.51 KB
Description	SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Datasheet	RB751V-40 Datasheet
Additional preview pages of the RB751V-40 datasheet.

Product details

Description

Cathode Anode 12 S8 Top View Marking Code: "S8" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range Symbol VRM VR IO IFSM Tj Ts Value 40 30 30 200 125 - 40 to + 125 Unit V V mA mA OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA Reverse Current at VR = 30 V Capacitance Between T

Features

Small surface mounting type.
Low reverse current and low forward voltage.
High reliability.

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Published: Mar 2, 2016 |