Semtech Corporation RB751V-40
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
| Part No. | RB751V-40 |
|---|---|
| Datasheet | RB751V-40 Download |
| Manufacturer |  Semtech Corporation |
| Description | SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE |
| Buy | Stock & Price |
FEATURES
● Small surface mounting type● Low reverse current and low forward voltage
● High reliability
APPLICATIONS
● High speed switching PINNING PIN 1 2DESCRIPTION
Cathode Anode 12 S8 Top View Marking Code: "S8" Simplified outline SOD-323 and symbolABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range Symbol VRM VR IO IFSM Tj Ts Value 40 30 30 200 125 - 40 to + 125 Unit V V mA mA OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA Reverse Current at VR = 30 V Capacitance Between Terminals at VR = 1 V, f = 1 MHz Note: ESD sensitive product handling required. Symbol VF IR CT Typ. 2 Max. 0.37 0.5 - Unit V µA pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 RB751V-40 PACKAGE OUTLINE Plastic surf...