DESCRIPTION
A 20ns max propagation delay from input transition to the gate of the power FET’s guarantees operation at high switching frequencies. Internal overlap protection circuit prevents shoot-through from Vin to GND in the main and synchronous MOSFETs. High current drive capability (2A peak) allows fast switching, thus reducing switching losses at high (up to 1.5MHz) frequencies without causing thermal stress on the driver. High Speed, Combi-Sense , Synchronous Power MOSFET Driver for Mobile APPLICATIONS
TM TARGET FEATURES
u u u u u u u u u High efficiency Shutdown mode for increased power saving Tri-state capability Fast rise and fall times (15ns typical with 3000pF load) 5V gate drive Ultra-low (<20ns) propagation delay (BG going low) Adaptive and programmable non-overlapping gate drives provide shoot-through protection Floating top drive switches up to 27V High frequency (to 1.5 MHz) operation allows use of small inductors and low cost ceramic capacitors Under-voltage lockout L...
Semtech Corporation
