Datasheet4U Logo Datasheet4U.com

SDB310Q - SCHOTTKY BARRIER DIODE

General Description

Max.

SEMTECH ELECTRONICS LTD.

Key Features

  • Low power rectified.
  • Silicon epitaxial type.
  • High reliability Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Forward Current Repetitive Peak Forward Current Non-Repetitive Peak Forward Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA at IF = 30 mA Reverse Current at VR = 30 V Total Capacitance at VR = 1 V, f = 1 MHz Reverse Recovery Time at IF = IR =.

📥 Download Datasheet

Datasheet Details

Part number SDB310Q
Manufacturer SEMTECH
File Size 223.82 KB
Description SCHOTTKY BARRIER DIODE
Datasheet download datasheet SDB310Q Datasheet

Full PDF Text Transcription for SDB310Q (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SDB310Q. For precise diagrams, and layout, please refer to the original PDF.

SDB310Q SCHOTTKY BARRIER DIODE Features • Low power rectified • Silicon epitaxial type • High reliability Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage ...

View more extracted text
ility Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Forward Current Repetitive Peak Forward Current Non-Repetitive Peak Forward Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA at IF = 30 mA Reverse Current at VR = 30 V Total Capacitance at VR = 1 V, f = 1 MHz Reverse Recovery Time at IF = IR = 10 mA, IRR = 1 mA, RL = 100 Ω PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 G Top View Marking Code: "G" Simplified outline SOD-523 and symbol Symbol VR IF IFRM IFSM PD Tj Ts Value 30 0.2 0.5 2 150 150 - 55 to + 150