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SDB310WS - SCHOTTKY BARRIER DIODE

General Description

Max.

SEMTECH ELECTRONICS LTD.

Key Features

  • Low power rectified.
  • Silicon epitaxial type.
  • High reliability Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Forward Current Repetitive Peak Forward Current Non-Repetitive Peak Forward Current (8.3 ms) Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA at IF = 30 mA Reverse Current at VR = 30 V Total Capacitance at VR = 1 V, f = 1 MHz.

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Datasheet Details

Part number SDB310WS
Manufacturer SEMTECH
File Size 164.35 KB
Description SCHOTTKY BARRIER DIODE
Datasheet download datasheet SDB310WS Datasheet

Full PDF Text Transcription for SDB310WS (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SDB310WS. For precise diagrams, and layout, please refer to the original PDF.

SDB310WS SCHOTTKY BARRIER DIODE Features • Low power rectified • Silicon epitaxial type • High reliability Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage...

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bility Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Forward Current Repetitive Peak Forward Current Non-Repetitive Peak Forward Current (8.3 ms) Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA at IF = 30 mA Reverse Current at VR = 30 V Total Capacitance at VR = 1 V, f = 1 MHz PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 YK Top View Marking Code: "YK" Simplified outline SOD-323 and symbol Symbol VR IF IFRM IFSM PD Tj Ts Value 30 0.2 0.5 1 150 150 - 55 to + 150 Unit V A A A mW OC OC Symbol VF IR CT Max. 0.4 0.5 1 10 Unit