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ST2SD965 - NPN Silicon Transistor

Features

  • ․Low collector-emitter saturation voltage ․Satisfactory operation performances at high efficiency with the low voltage power supply TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta=25oC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Peak Collector Current Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO ICP IC Ptot Tj TS Value 40 20 7 8 5 750 150 -55 to +150 Unit V V V A A mW O O C C.

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Datasheet Details

Part number ST2SD965
Manufacturer SEMTECH
File Size 226.85 KB
Description NPN Silicon Transistor
Datasheet download datasheet ST2SD965 Datasheet

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Full PDF Text Transcription

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ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Features ․Low collector-emitter saturation voltage ․Satisfactory operation performances at high efficiency with the low voltage power supply TO-92 Plastic Package Weight approx. 0.
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