Click to expand full text
ST 2SD966
NPN Silicon Epitaxial Planar Transistor for low-frequency power amplification and stroboscope. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25OC) Symbol Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Peak Collector Current Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO ICP IC Pc Tj TS Value 40 20 7 8 5 1 150 -55 to +150 Unit V V V A A W
O O
C C
SEMTECH ELECTRONICS LTD.
ST2SD966 Datasheet
