• Part: 1SS321
  • Description: SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
  • Category: Diode
  • Manufacturer: SEMTECH
  • Size: 184.50 KB
Download 1SS321 Datasheet PDF
SEMTECH
1SS321
1SS321 is SILICON EPITAXIAL SCHOTTKY BARRIER DIODE manufactured by SEMTECH.
Features - Low forward voltage - Low reverse current Marking Code: "ZC" SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum Peak Reverse Voltage Reverse Voltage Average Forward Current Maximum Peak Forward Current Non-Repetitive Peak Forward Surge Current ( t = 10 ms) Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IO IFM IFSM Pd Tj Tstg Value 12 10 50 150 1 150 125 - 55 to + 125 Unit V V m A m A A m W Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 50 m A Reverse Current at VR = 10 V Reverse Breakdown Voltage at IR = 10 µA Total Capacitance at VR = 0 , f = 1 MHz Symbol VF IR V(BR)R CT Min. 12 Max. 1 500 4.5 Unit V n A V p F SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 04/12/2007 Datasheet pdf - http://..net/ .Data Sheet.co.kr SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 04/12/2007 Datasheet pdf -...