• Part: MMBD217SEW
  • Description: SILICON EPITAXIAL PLANAR SWITCHING DIODE
  • Category: Diode
  • Manufacturer: SEMTECH
  • Size: 332.35 KB
Download MMBD217SEW Datasheet PDF
SEMTECH
MMBD217SEW
MMBD217SEW is SILICON EPITAXIAL PLANAR SWITCHING DIODE manufactured by SEMTECH.
SILICON EPITAXIAL PLANAR SWITCHING DIODE Applications - Ultra high speed switching 1 2 Marking Code: A7 Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak .. Reverse Voltage Symbol VRM VR IO IFM IFSM Pd TJ Ts Value 80 80 100 300 4 200 150 - 55 to + 150 Unit V V m A m A A m W Reverse Voltage Average Rectified Forward Current (Single) Maximum (Peak) Forward Current (Single) Peak Forward Surge Current (tp = 1 µs) Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 m A Reverse Current at VR = 70 V Capacitance between Terminals at VR = 6, f = 1 MHz Reverse Recovery Time at IF = 5 m A, VR = 6 V, RL = 50 Ω Symbol VF IR CT trr Max. 1.2 0.1 3.5 4 Unit V µA p F ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 10/10/2008 .. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated :...