MMBT8050D Datasheet | SEMTECH

MMBT8050C / MMBT8050D NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As plementary type the PNP transistor MMBT8550C and MMBT8550D are remended. .. SOT-23 Plastic Package Absolute Maximum Ratings (T a = 25 OC) Symbol Value 25 40 6 600 200 150 -55 to +150 Unit V V V m A m W Collector Emitter Voltage C o ll e ct o r B as e V o lt a g e Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCEO VCBO VEBO IC Ptot Tj TS РАДИОТЕХ-ТРЕЙД ® Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: .rct.ru MMBT8050C / MMBT8050D Characteristics at Ta =25 OC Symbol DC Current Gain at VCE=1V, IC=100m A at VCE=1V, IC=500m A Collector Cutoff Current at VCB=35V Collector Saturation Voltage at IC=500m A, IB=50m A Base Saturation Voltage at IC=500m A, IB=50m A Collector Emitter Breakdown Voltage at IC=2m A Collector Base Breakdown Voltage at IC=10µA Emitter Base Breakdown Voltage at IE=100µA Gain Bandwidth Product at VCE=5V, IC=10m A, f=50MHz Collector Base Capacitance at VCB=10V, f=1MHz Thermal Resistance Junction to Ambient CCBO Rth A 12 f T 100 V(BR)EBO 6 V(BR)CBO 40 V(BR)CEO 25 VBE(sat) VCE(sat) MMBT8050C MMBT8050D h FE h FE h FE ICBO 100 160 40 Min. Typ. .. Max. 250 400 100 0.5 1.2 200 Unit n A V V V V V MHz p F K/W SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 MMBT8050C / MMBT8050D Admissible power dissipation versus ambient temperature Valid provided that leads are kept at ambient temperature at a distance of 2mm from case .. Collector current versus base emitter voltage W 1 m A 3 10 25 C -50 C 150 o C typical limits at Tamb=25 C o o 10 2 Ptot 10 0.4 1 5 2 5...