MMBTSA1036
MMBTSA1036 is NPN Transistor manufactured by SEMTECH.
PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain.
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SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 40 32 5 500 200 150 -55 to +150 Unit V V V m A m W
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 20/10/2005
Characteristics at Tamb=25 OC Symbol DC Current Gain at -VCE=3V, -IC=100m A Current Gain Group P Q R Collector-base breakdown voltage at -IC=100μA Collector-emitter breakdown voltage at -IC=1m A Emitter-base breakdown voltage at -IC=100μA Collector Cutoff Current at -VCB=20V Emitter Cutoff Current at -VEB=4V Collector Saturation Voltage at -IC=300m A, -IB=30m A Transition Frequency at -VCE=5V, -IE=20m A, f=100MHz Collector Output Capacitance at -VCB=10V, f=1MHz Cob 7 f T 200 -VCE(sat) -IEBO -ICBO h FE h FE h FE -V(BR)CBO -V(BR)CEO -V(BR)EBO 82 120 180 40 32 5 Min. Typ.
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Max.
Unit
180 270 390
- V V V
1 1 0.6
- μA μA V MHz p F
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated :...
