MMBTSA1256 Datasheet | SEMTECH

PNP Silicon Epitaxial Planar Transistor for use in FM RF amplifier, mixer, oscillators, converters and IF amplifiers applications The transistor is subdivided into three groups, R, Q and Y according to its DC current gain. .. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 30 20 5 30 200 125 - 55 to + 125 Unit V V V m A m W Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 6 V, -IC = 1 m A Current Gain Group R Q Y Symbol h FE h FE h FE -ICBO -IEBO f T Cre NF Min. 60 90 135 150 Typ. 230 2.5 Max. 120 180 270 0.1 0.1 1.7 Unit µA µA MHz p F d B Collector Cutoff Current at -VCB = 10 V Emitter Cutoff Current at -VEB = 4 V Transition Frequency at -VCE = 6 V, -IC = 1 m A Reverse Transfer Capacitance at -VCB = 6 V, f = 1 MHz Noise Figure at -VCE = 6 V, -IC = 1 m A, f = 100 MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 03/08/2006 .. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated :...