MMBTSA1298 Datasheet | SEMTECH

PNP Silicon Epitaxial Planar Transistor for low frequency power amplifier and power switching applications The transistor is subdivided into two groups, O and Y according to its DC current gain. .. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC -IB Ptot Tj TS Value 30 25 5 800 160 200 150 -55 to +150 Unit V V V m A m A m W Characteristics at Tamb=25 OC Parameter DC Current Gain at -VCE = 1 V, -IC = 100 m A at -VCE = 1 V, -IC = 800 m A Collector Cutoff Current at -VCB = 30 V Emitter Cutoff Current at -VEB = 5 V Collector Saturation Voltage at -IC = 500 m A, -IB = 20 m A Base Emitter Voltage at -VCE = 1 V, -IC = 10 m A Collector Emitter Breakdown Voltage at -IC = 10 m A Emitter Base Breakdown Voltage at -IE = 0.1 m A Transition Frequency at -VCE = 5 V, -IC = 10 m A Collector Output Capacitance at -VCB = 10 V, f = 1 MHz O Y Symbol h FE h FE h FE -ICBO -IEBO -VCE(sat) -VBE -V(BR)CEO -V(BR)EBO f T Cob Min. 100 160 40 0.5 25 5 Typ. 120 13 Max. 200 320 0.1 0.1 0.4 0.8 Unit µA µA V V V V MHz p F SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 18/04/2006 .. - VCE MON EMITTER o -5 Ta=25 C DC CURRENT GAIN h FE h FE - I C 1000 500 300 100 50 30 10 -1 -3 -10 -30 -100 -300 -1000 MON EMITTER VCE=-1V Ta=100 o C 25 -25 COLLECTOR CURRENT I C (m A) -800 -6 -4 -600 -3 -2 I B =-1m A -400 -200 0 0 -2 -4 0 -6 -8 -10 COLLECTOR-EMITTER VOLTAGE VCE (V) VCE(sat) - I C COLLECTOR CURRENT I C (m A) COLLECTOR -EMITTER SATURATION VOLTAGE VCE(sat) (V) - VBE -1 -0.5 -0.3 Ta=100 o C -0.1 -0.05 -0.03 -0.01 -1 -3 -10 -30 -100 -300 -1000 25 -25 MON EMITTER I C/I B =25 COLLECTOR CURRENT I C (m A) -2 -800 MON EMITTER VCE=-1V -600 Ta=100 o C...