MMBTSA1298W
MMBTSA1298W is NPN Transistor manufactured by SEMTECH.
PNP Silicon Epitaxial Planar Transistor for low frequency power amplifier and power switching applications The transistor is subdivided into two groups, O and Y according to its DC current gain.
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Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Range
Symbol -VCBO -VCEO -VEBO -IC -IB Ptot Tj TS
Value 35 30 5 800 160 200 150
- 55 to + 150
Unit V V V m A m A m W
Characteristics at Ta = 25 OC
Parameter DC Current Gain at -VCE = 1 V, -IC = 100 m A at -VCE = 1 V, -IC = 800 m A Collector Cutoff Current at -VCB = 30 V Emitter Cutoff Current at -VEB = 5 V Collector Emitter Breakdown Voltage at -IC = 10 m A Emitter Base Breakdown Voltage at -IE = 1 m A Collector Saturation Voltage at -IC = 500 m A, -IB = 20 m A Base Emitter Voltage at -VCE = 1 V, -IC = 10 m A Transition Frequency at -VCE = 5 V, -IC = 10 m A Collector Output Capacitance at -VCB = 10 V, f = 1 MHz Current Gain Group O Y Symbol h FE h FE h FE -ICBO -IEBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE f T Cob Min. 100 160 40 30 5 0.5 Typ. 120 13 Max. 200 320 100 100 0.4 0.8 Unit n A n A V V V V MHz p F
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
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Dated : 04/06/2007
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- VCE MON EMITTER o -5 Ta=25 C
DC CURRENT GAIN h FE h FE
- I C 1000 500 300 100 50 30 10 -1 -3 -10 -30 -100 -300 -1000 MON EMITTER VCE=-1V Ta=100 o C 25 -25
COLLECTOR CURRENT I C (m A)
-800
-6
-4 -600 -3 -2 I B =-1m A
-400
-200
0 0 -2 -4
0 -6 -8 -10
COLLECTOR-EMITTER VOLTAGE VCE (V) VCE(sat)
- I C
COLLECTOR CURRENT I C (m A)
COLLECTOR -EMITTER SATURATION VOLTAGE VCE(sat)...
