MMBTSA1979
MMBTSA1979 is NPN Transistor manufactured by SEMTECH.
PNP Silicon Epitaxial Planar Transistor
For medium power amplifier applications The transistor is subdivided into two groups, O and Y according to its DC current gain.
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SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 40 32 5 500 200 150
- 55 to + 150 Unit V V V m A m W
Characteristics at Tamb = 25 OC Parameter DC Current Gain at -VCE = 1 V, -IC = 100 m A Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 1 m A Emitter Base Breakdown Voltage at -IE = 10 µA Collector Cutoff Current at -VCB = 40 V Emitter Cutoff Current at -VEB = 5 V Collector Saturation Voltage at -IC = 100 m A, -IB = 10 m A Transition Frequency at -VCE = 6 V, -IC = 20 m A Collector Output Capacitance at -VCB = 6 V, f = 1 MHz O Y Symbol h FE h FE -V(BR)CBO -V(BR)CEO -V(BR)EBO -ICBO -IEBO -VCE(sat) f T Cob Min. 70 120 40 32 5 Typ. 200 7.5 Max. 140 240 0.1 0.1 0.25 Unit V V V µA µA V MHz p F
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
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Dated : 04/08/2006
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SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated :...
