MMBTSA1980W Datasheet | SEMTECH

PNP Silicon Epitaxial Planar Transistor for general small signal amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. .. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Tamb = 25 OC Parameter DC Current Gain at -VCE = 6 V, -IC = 2 m A Current Gain Group O Y G L Symbol h FE h FE h FE h FE -V(BR)CBO -V(BR)CEO -V(BR)EBO -ICBO -IEBO -VCE(sat) f T COB NF Min. 70 120 200 300 50 50 5 80 Max. 140 240 400 700 0.1 0.1 0.3 7 10 Unit V V V µA µA V MHz p F d B Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 50 50 5 150 200 150 -55 +150 Unit V V V m A m W Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 1 m A Emitter Base Breakdown Voltage at -IE = 10 µA Collector Cutoff Current at -VCB = 50 V Emitter Cutoff Current at -VEB = 5 V Collector Emitter Saturation Voltage at -IC = 100 m A, -IB = 10 m A Transition Frequency at -VCE = 10 V, -IC = 1 m A Collector Output Capacitance at -VCB = 10 V, f = 1 MHz Noise Figure at -VCE = 6 V, -IC = 0.1 m A,tf = 1 KHz, RG = 10 KΩ SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 30/03/2006 .. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated :...