ST2SD1616A
ST2SD1616A is NPN Silicon Transistor manufactured by SEMTECH.
- Part of the ST2SD1616 comparator family.
- Part of the ST2SD1616 comparator family.
ST 2SD1616 / 2SD1616A
NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage 2SD1616 2SD1616A Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current (pulse) Power Dissipation Junction Temperature Storage Temperature Range 1) PW≦10ms, Duty Cycle≦50%
1)
Value 60 120
Unit V
VCBO
2SD1616 2SD1616A
VCEO VEBO IC IC Ptot Tj TS
50 60 6 1 2 0.75 150 -55 to +150
V V A A W ℃ ℃
..
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
ST 2SD1616 / 2SD1616A
Characteristics at Tamb=25 OC Symbol DC Current Gain
2)
Min.
Typ.
Max.
Unit at VCE=2V, IC=100m A
R O Y h FE h FE h FE h FE
135 200 300 81 600 100
- -
270 400 600 700 m V n A n A V V MHz p F µs µs µs at VCE=2V, IC=1A Base Emitter Voltage
2) at VCE=2V ,IC=50m A Collector Cutoff Current at VCB=60V/120V Emitter Cutoff Current at VEB=6V Collector Saturation Voltage at IC=1A, IB=50m A Base Saturation Voltage at IC=1A, IB=50m A Gain Bandwidth Product at VCE=2V, IC=-100m A Output Capacitance at VCB=10V, f=1MHz Turn-on Time Storage Time Fall Time at VCC=10V, IC=-100m A IB1=-IB2=10 m A VBE(off)=-2 to 3 V
2)...
