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INTEGRATED CIRCUIT
M 36000
PRELIMINARY DATA
IT READ ONLY MEMORY
8K x 8 ORGANIZATION - EDGE ENABLED OPERATION (CE) 250 ns ACCESS TIME, 375 ns CYCLE TIME FOR M36000-4 ·300 ns ACCESS TIME, 450 ns CYCLE TIME FOR M36000-5
INGLE +5V ±.10% POWER SUPPLY . LOW POWER DISSIPATION: 220 mW MAX ACTIVE
. LOW STANDBY POWER DISSIPATION: 35 mW MAX (CE HIGH)
ON CHIP LATCHES FOR ADDRESSES (CONTROLLED BY CE INPUT) INPUTS AND THREE-STATE OUTPUTS - TTL COMPATIBLE OUTPUT DRIVE 2 TTL LOADS AND 100 pF STANDARD 24 PIN DIP (EPROM PIN OUT COMPATIBLE)
M36000 is a N--channel silicon gate MOS Read Only Memory, organized as 8192 words by 8 bits.
M36000 Datasheet
