BLV4N60 Description
This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. , Junction to Ambient Max.
BLV4N60 is N-channel Enhancement Mode Power MOSFET manufactured by SHANGHAI BELLING.
| Part Number | Description |
|---|---|
| BLV108 | Vertical N-channel MOSFET |
| BLV2N60 | N-channel Enhancement Mode Power MOSFET |
| BLV7002 | N-channel Enhancement Mode Vetical D-MOS Transistor |
| BLVP304 | P-channel vertical MOSFET |
This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. , Junction to Ambient Max.