Datasheet Details
| Part number | BLV4N60 |
|---|---|
| Manufacturer | SHANGHAI BELLING |
| File Size | 463.00 KB |
| Description | N-channel Enhancement Mode Power MOSFET |
| Datasheet | BLV4N60_SHANGHAIBELLING.pdf |
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Overview: BLV4N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified • Fast Switching • Simple Drive Requirements BVDSS RDS(ON) ID 600V 2.
| Part number | BLV4N60 |
|---|---|
| Manufacturer | SHANGHAI BELLING |
| File Size | 463.00 KB |
| Description | N-channel Enhancement Mode Power MOSFET |
| Datasheet | BLV4N60_SHANGHAIBELLING.pdf |
|
|
|
This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
Designed for high efficiency switch mode power supply.
Absolute Maximum Ratings ( TC=25oC unless otherwise noted ) Symbol VDS VGS ID IDM PD EAS IAR EAR Tj TSDG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current ( TC=100 oC) Drain Current (pulsed) (Note 1) Power Dissipation Linear Derating Factor Single Pulsed Avalanche Energy (Note2) Avalanche Current Repetitive Avalanche Energy Operating Junction Temperature Range Storage Temperature Range Value 600 + 20 4 2.53 16 104 0.83 218 4 10.4 -55 to +150 -55 to +150 Thermal Characteristics Symbol Rth j-c Rth j-a Parameter Thermal Resistance, Junction to case Max.
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