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S10H07M Datasheet N-CHANNEL POWER MOSFET

Manufacturer: SI-TECH

Download the S10H07M datasheet PDF. This datasheet also includes the S10H07M-SI variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (S10H07M-SI-TECH.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number S10H07M
Manufacturer SI-TECH
File Size 374.66 KB
Description N-CHANNEL POWER MOSFET
Download S10H07M Download (PDF)

General Description

This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products.

Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS PD TJ TSTG Drain-Source Voltage Continuous Drain Current (TC=25 ℃) Continuous Drain Current (TC=100℃) Pulsed Drain Current (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Maximum Power Dissipation (TC=25 ℃) Derating Factor above 25℃ Operating Junction Temperature Range Storage Temperature Range Thermal Characteristics Symbol Rth j-c Rth j-a Parameter Thermal Resistance, Junction to case Thermal Resistance, Junction to Ambient Value 100 70 58 280 ±25 270 131 0.87 -55 to +175 -55 to +175 Max.

Overview

SI-TECH SEMICONDUCTOR CO.,LTD S10H07M N-Channel MOSFET.

Key Features

  • 100V,70A,Rds(on)(typ)=9.2mΩ @Vgs=10V.
  • High Ruggedness.
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability General.