Datasheet Details
| Part number | S30N08M |
|---|---|
| Manufacturer | SI-TECH |
| File Size | 586.21 KB |
| Description | N-Channel MOSFET |
| Datasheet | S30N08M S30N08M-SI Datasheet (PDF) |
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Overview: SI-TECH SEMICONDUCTOR CO.,LTD S30N08M N-Channel Power MOSFET.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | S30N08M |
|---|---|
| Manufacturer | SI-TECH |
| File Size | 586.21 KB |
| Description | N-Channel MOSFET |
| Datasheet | S30N08M S30N08M-SI Datasheet (PDF) |
|
|
|
D G S Package Package Code Package Marking D G S TO-252 M Company Part No.
and Package Code Assembly Information Lot No.
Absolute Maximum Ratings(TC=25℃ unless otherwise noted) Symbol VDSS ID IDM VGS EAS PD TJ TSTG Parameter Drain-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Pulsed Drain Current (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Maximum Power Dissipation (TC=25℃) Derating Factor above 25℃ Operating Junction Temperature Range Storage Temperature Range Value 30 78 49 312 20 100 67 0.54 -55 to +150 -55 to +150 Ver.2.1 1 Units V A A A V mJ W W/℃ ℃ ℃ Nov.2020 SI-TECH SEMICONDUCTOR CO.,LTD Thermal Characteristics Symbol Rth j-c Parameter Thermal Resistance, Junction to case S30N08M N-Channel Power MOSFET Value 1.86 Units ℃/ W Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol BVDSS IDSS IGSS VGS(th) RDS(on) Qg Qgs Qgd td(on) tr td(off) tf Rg Ciss Coss Crss Parameter Test Conditions Drain-Source Breakdown Voltage VGS=0V, ID=250uA Drain-Source Leakage Current VDS=28V, VGS=0V Gate Leakage Current, Forward VGS=20V, VDS=0V Gate Leakage Current, Reverse VGS=-20V, VDS=0V Gate Threshold Voltage VGS=VDS, ID=250uA VGS=4.5V, ID=30A Drain-Source On-State Resistance VGS=10V, ID=30A Total Gate Charge VDD=24V Gate-Source Charge VGS=4.5V Gate-Drain Charge ID=30A (Note 3) Turn-on Delay Time VDD=24V,VGS=10V Turn-on Rise Time Turn-off Delay Time ID=30A,RG=4.7 TC=25℃ Turn-off Fall Time (Note 3) Gate Resistance VDS=0V,VGS=0V,f=1MHz Input Capacitance VDS=15V Output Capacitance VGS=0V Reverse Transfer Capacitance f =
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