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S60N10M - N-CHANNEL POWER MOSFET

Download the S60N10M datasheet PDF. This datasheet also covers the S60N10M-SI variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology.

Key Features

  • 60V, 100A,Rds(on)(typ)=5mΩ @Vgs=10V.
  • High Ruggedness.
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability General.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (S60N10M-SI-TECH.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number S60N10M
Manufacturer SI-TECH
File Size 359.32 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet S60N10M Datasheet

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Other Datasheets by SI-TECH

Part Number Description
S60N12R N-Channel MOSFET
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S60N12S N-Channel MOSFET
S60N15R N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SI-TECH SEMICONDUCTOR CO.,LTD S60N10M N-Channel MOSFET Features  60V, 100A,Rds(on)(typ)=5mΩ @Vgs=10V  High Ruggedness  Fast Switching  100% Avalanche Tested  Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products.