S60N10M - N-CHANNEL POWER MOSFET

This page provides the datasheet information for the S60N10M, a member of the S60N10M-SI N-CHANNEL POWER MOSFET family.

Description

This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology.

Features

60V, 100A,Rds(on)(typ)=5mΩ @Vgs=10V.
High Ruggedness.
Fast Switching.
100% Avalanche Tested.
Improved dv/dt Capability General.

📥 Download Datasheet

S60N10M N-CHANNEL POWER MOSFET by SI-TECH - Datasheet Preview — Datasheet preview – S60N10M

Datasheet Details

Part number	S60N10M
Manufacturer	SI-TECH
File Size	359.32 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	S60N10M Datasheet
Additional preview pages of the S60N10M datasheet.

📁 Similar Datasheet

S6000-AL - Magnetics (Coilcraft)
S6006DS2 - Thyristors (Littelfuse)
S6006DS2 - SCRs (HAOPIN)
S6006DS3 - Thyristors (Littelfuse)
S6006LS2 - Thyristors (Littelfuse)
S6006LS3 - Thyristors (Littelfuse)
S6006NS2 - Thyristors (Littelfuse)
S6006NS3 - Thyristors (Littelfuse)
S6006RS2 - Thyristors (Littelfuse)
S6006RS3 - Thyristors (Littelfuse)

Other Datasheets by SI-TECH

S60N12R - N-Channel MOSFET
S60N12RN - N-Channel MOSFET
S60N12RP - N-Channel MOSFET
S60N12S - N-Channel MOSFET
S60N15R - N-Channel MOSFET
S60N15RN - N-Channel MOSFET
S60N15RP - N-Channel MOSFET
S60N15S - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

SI-TECH SEMICONDUCTOR CO.,LTD S60N10M N-Channel MOSFET Features  60V, 100A,Rds(on)(typ)=5mΩ @Vgs=10V  High Ruggedness  Fast Switching  100% Avalanche Tested  Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products.

Published: Feb 13, 2020 |