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S80N18S - N-Channel MOSFET

Download the S80N18S datasheet PDF. This datasheet also covers the S80N18R-SI variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology.

Key Features

  • 80V,180A,Rds(on)(typ)=3mΩ @Vgs=10V.
  • High Ruggedness.
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability General.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (S80N18R-SI-TECH.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number S80N18S
Manufacturer SI-TECH
File Size 448.53 KB
Description N-Channel MOSFET
Datasheet download datasheet S80N18S Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SI-TECH SEMICONDUCTOR CO.,LTD N-Channel MOSFET S80N18R/S Features █ 80V,180A,Rds(on)(typ)=3mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products.