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SVF20N50PN - 20A 500V N-CHANNEL MOSFET

Download the SVF20N50PN datasheet PDF. This datasheet also covers the SVF20N50F variant, as both devices belong to the same 20a 500v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SVF20N50F/PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Key Features

  • ∗ 20A, 500V, RDS(on(typ)=0.20Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVF20N50F-SILANMICROELECTRONICS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVF20N50PN
Manufacturer SILAN MICROELECTRONICS
File Size 281.46 KB
Description 20A 500V N-CHANNEL MOSFET
Datasheet download datasheet SVF20N50PN Datasheet

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Other Datasheets by SILAN MICROELECTRONICS

Part Number Description
SVF20N50F 20A 500V N-CHANNEL MOSFET
SVF20N60F 20A 600V N-CHANNEL MOSFET
SVF20N60PN 20A 600V N-CHANNEL MOSFET
SVF20NE60PN 600V N-CHANNEL MOSFET
SVF23N50PN 23A 500V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SVF20N50F/PN_Datasheet 20A 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF20N50F/PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 20A, 500V, RDS(on(typ)=0.20Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.