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Silan Microelectronics
SVF23N50PN_Datasheet
23A 500V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF23N50PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
2
1 3
1.Gate 2.Drain 3.Source
FEATURES
23A, 500V, RDS(on(typ)=0.21@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
1 23
TO-3P
ORDERING INFORMATION
Part No.