SVD7N65AT - 650V N-CHANNEL MOSFET

SILAN

General Description

structure DMOS technology.

Key Features

∗ 7A,650V,RDS(on)(typ)=1.1 Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.

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SVD7N65AT 650v n-channel mosfet by SILAN - Datasheet Preview

Datasheet Details

Part number	SVD7N65AT
Manufacturer	SILAN
File Size	565.00 KB
Description	650V N-CHANNEL MOSFET
Datasheet	SVD7N65AT Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SVD7N65AT/F_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD7N65AT/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ∗ 7A,650V,RDS(on)(typ)=1.1 Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING SPECIFICATIONS Part No.