Datasheet Summary
SVD4N60D/F(G)/T_Datasheet
4A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD4N60D/F(G)/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
Features
∗ 4A, 600V, RDS(on)(typ)=2.0Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt...