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SVD4N65F Datasheet (svd4n65t / Svd4n65f) 650v N-channel MOSFET

Manufacturer: Silan

Overview: SVD4N65T/SVD4N65F 4A, 650V N-CHANNEL MOSFET GENERAL.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

SVD4N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology.

The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.

Key Features

  • ∗ 4A,650V,RDS(on) typ =2.3Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.

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