SSF6NS65UF Description
The SSF6NS65UF series MOSFETs is a new technology, which bines an innovative technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving. Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain...
SSF6NS65UF Key Features
- High dv/dt and avalanche capabilities
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- 0.78 1.7 0.84 1.98
- 12 2.3 2.5 8.9 5.1 25 13 342 19 3.0
- 1 50 100
- Max. 6①
- 0.83 1.2
- Units A