SZP-2026Z Datasheet | SIRENZA MICRODEVICES

Preliminary Product Description .. Sirenza Microdevices’ SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with In Ga P on Ga As device technology and fabricated with MOCVD for an ideal bination of low cost and high reliability. This product is specifically designed as a flexible final or driver stage for 802.16 and 802.11 equipment in the 2.22.7GHz bands. It can run from a 3V to 6V supply. It is prematched to ~5 ohms on the input for broadband performance and ease of matching at the board level. It Features an output power detector, on/off power control, ESD protection, excellent overall robustness and a proprietary hand reworkable and thermally enhanced SOF-26 package. This product Features a Ro HS pliant and Green package with matte tin finish, designated by the ‘Z’ suffix. 2.2-2.7GHz 2W In Ga P Amplifier Pb Ro HS pliant & Green Package Proprietary SOF-26 Package Product Features - - - - - P1d B = 33.5d Bm @ 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance Pout = 26d Bm @ 2.5%EVM, Vcc 5V Pout = 27d Bm @ 2.5% EVM, Vcc 6V On-chip Output Power Detector Input Prematched to ~5 ohms Proprietary Low Thermal Resistance Package Hand Solderable and Easy Rework Power up/down control < 1µs Functional Block Diagram Vcc = 5V SZP-2026 RFOUT RFIN Active Bias - - - Vbias = 5V Applications Power Detector Power Up/Dow n Control 802.16 Wi MAX Driver or Output Stage 2.4GHz 802.11 WLAN and ISM Applications Unit MHz d Bm d B d Bm d Bc d B d B V m A m A 395 8 8 Min. 2200 31.5 11.3 33 12.8 26.2 -45 4.3 12 12 0.85 to 1.4 445 2.1 10 12 495 -42 Typ. Max. 2700 Key Specifications Symbol f O P1d B S21 Pout IM3 NF IRL ORL Vdet Range Icq IVPC Ileak Rth, j-l Frequency of Operation Output Power at 1d B pression - 2.7GHz Small Signal Gain - 2.7GHz Parameters: Test Conditions, 2.5-2.7GHz App circuit, Z0 = 50Ω, VCC =...