SZP-3026Z Datasheet | SIRENZA MICRODEVICES

Preliminary .. Sirenza Microdevices’ SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with In Ga P on Ga As device technology and fabricated with MOCVD for an ideal bination of low cost and high reliability. This product is specifically designed as a flexible final or driver stage for 802.16 equipment in the 2.7-3.8GHz bands. It can run from a 3V to 6V supply. It is prematched to ~5 ohms on the input for broadband performance and ease of matching at the board level. It Features an output power detector, on/off power control, ESD protection, excellent overall robustness and a proprietary hand reworkable and thermally enhanced SOF-26 package. This product Features a Ro HS pliant and Green package with matte tin finish, designated by the ‘Z’ suffix. Product Description 2.7-3.8GHz 2W In Ga P Amplifier Pb Ro HS pliant & Green Package Proprietary SOF-26 Package Product Features - - - - - P1d B = 33.5d Bm @ 5V 802.11g 54Mb/s Class AB Performance Pout = 26d Bm @ 2.5% EVM, Vcc 5V, 570m A Pout = 27d Bm @ 2.5% EVM, Vcc 6V, 590m A On-chip Output Power Detector Input Prematched to ~5 ohms Proprietary Low Thermal Resistance Package Hand Solderable and Easy Rework Power up/down control < 1µs Functional Block Diagram Vcc = 5V SZP-3026 RFOUT RFIN Active Bias - - - Vbias = 5V Applications P ower Detector P ower Up/Dow n Control 802.16 Wi MAX Driver or Output Stage WLL Unit MHz d Bm d B d Bm d Bc d B d B V m A m A 415 10 6 Min. 2700 32.0 10.3 33.5 11.8 26.0 -44 5.9 14 9 0.9 to 2.2 460 2.3 10 12 510 -41 Typ. Max. 3800 Key Specifications Symbol f O P1d B S21 Pout IM3 NF IRL ORL Vdet Range Icq IVPC Ileak Rth, j-l Parameters: Test Conditions, 3.4-3.6GHz App circuit, Z0 = 50Ω, VCC = 5.0V, Iq = 460m A, TBP = 30ºC Frequency of Operation Output Power at 1d B pression - 3.5GHz Small Signal Gain - 3.5GHz Output power...