SNM048R5DNAQ Overview
Description
The SNM048R5DNAQ is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
Key Features
- Drain-Source Withstand Voltage: 40V
- Max. RDS(on) : 8.5mΩ @ VGS=10V 13.0mΩ @ VGS=4.5V
- Automotive applications
- AEC-Q101 Qualified
- Excellent ON resistance
