SNM067500EAQ Description
The SNM067500EAQ is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit.
SNM067500EAQ Key Features
- Drain-Source Withstand Voltage: 60V
- Max. RDS(on) : 7.5mΩ @ VGS=10V
- HBM Class 2 (6)
- Automotive