SNM067500EAQ Overview
Description
The SNM067500EAQ is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
Key Features
- Drain-Source Withstand Voltage: 60V
- Max. RDS(on) : 7.5mΩ @ VGS=10V 8.0mΩ @ VGS=4.5V
- HBM Class 2 (6)
- Automotive applications
- AEC-Q101 Qualified
- Excellent ON resistance
- Small package SOT-23
- Supper high density cell design
- MSL1 PRODUCT APPEARANCE ： SOT-23
