SNM068R2DRAQ
SNM068R2DRAQ is Single N-channel Power MOSFET manufactured by SIT.
芯力特
SNM068R2DRAQ Single N-Channel, 60V, 60A Power MOSFET
Features
- Drain-Source Withstand Voltage: 60V
- Max. RDS(on) : 8.2 mΩ @ VGS=10V
13.5 mΩ @ VGS=4.5V
- Automotive applications
- AEC-Q101 Qualified
- Excellent ON resistance
- General footprint package PDFN3333-8L
- 100% Rg and Avalanche tested
- MSL1
PRODUCT APPEARANCE ：
PDFN3333-8L
DESCRIPTION
The SNM068R2DRAQ is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high performance automotive DC-DC conversion, power switch and charging circuit. Standard Product SNM068R2DRAQ is in pliance with Ro HS. Applications:
- Automotive systems
- DC/DC converters
- Power supply converters circuit
- Load/Power Switching for portable device
PIN CONFIGURATION
REC V1.0 July 2024
Top view 1 / 11
.sitcores.
芯力特
MARKING
SNM068R2DRAQ Single N-Channel, 60V, 60A Power MOSFET
6303 DRMW
6303 DR M W
= Device Code = Special Code = Month =...
