SNM068R2DRAQ Overview
Description
The SNM068R2DRAQ is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
Key Features
- Drain-Source Withstand Voltage: 60V
- Max. RDS(on) : 8.2 mΩ @ VGS=10V 13.5 mΩ @ VGS=4.5V
- Automotive applications
- AEC-Q101 Qualified
- Excellent ON resistance
