SNM068R2DRAQ Description
The SNM068R2DRAQ is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high performance automotive DC-DC conversion, power switch and charging circuit.
SNM068R2DRAQ Key Features
- Drain-Source Withstand Voltage: 60V
- Max. RDS(on) : 8.2 mΩ @ VGS=10V
- Automotive