SNM101R5TLAQ Description
The SNM101R5TLAQ is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high performance automotive DC-DC conversion, power switch and charging circuit.
SNM101R5TLAQ Key Features
- Drain-Source Withstand Voltage: 100V
- Max. RDS(on) : 1.5mΩ @ VGS=10V
- Automotive