SNM101R5TLAQ Overview
Description
The SNM101R5TLAQ is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
Key Features
- Drain-Source Withstand Voltage: 100V
- Max. RDS(on) : 1.5mΩ @ VGS=10V
- Automotive applications
- AEC-Q101 Qualified
- Excellent ON resistance
- Package TOLL-8L
- 100% Rg and Avalanche tested
- MSL1 PRODUCT APPEARANCE ： TOLL-8L
