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RM008 - PA Module

General Description

of the RM008 dual-band Power Amplifier Module.

Key Features

  • High efficiency GSM 50% DCS 45% Input and output matching 50 ohms internal Small outline 9.1 mm x 11.61 mm Low profile 1.64 mm.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com RM008 PA Module for Dual-band GSM900 and DCS1800 Applications The RM008 is a dual-band Power Amplifier Module (PAM) designed in a compact form factor for Class 4 GSM900 and Class 1 DCS1800 operation. The PAM consists of two Gallium Arsenide (GaAs) Heterojunction Bipolar Transistor (HBT) power amplifiers and internal components that match the RF input and output ports to 50 ohms, which reduces the number of external components for a dual-band design. Optimized for lithium-ion battery operation, both PAs share common power supply pins to distribute current. The RM008 dual PAM has extremely low standby current, which maximizes handset standby time. A block diagram of the RM008 is shown below.