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RM009 - Power Amplifier Module

General Description

Figure 2 is a mechanical diagram of the pad layout for the 16-pin leadless, RM009 Power Amplifier module.

Key Features

  • form factor for Class 4 GSM900 and Class 1 DCS1800 cellular handsets.
  • High efficiency GSM 54% DCS 45% Input/output matching 50 Ω internal Small outline 9.1 mm x 11.6 mm Low profile 1.50 mm ±10% Low APC current 60 µA The module consists a GSM900 PA block and a DCS1800 PA block, matching circuitry for 50 Ω input and output impedances, and bias control circuitry. Two separate Heterojunction Bipolar Transistor (HBT) PA blocks are fabricated on a single Gallium Arsenide (GaAs) die. One PA.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com RM009 Power Amplifier Module for Dual-band GSM900 DCS1800 The RM009 is a dual-band Power Amplifier Module (PAM) designed in a compact Distinguishing Features form factor for Class 4 GSM900 and Class 1 DCS1800 cellular handsets. • High efficiency GSM 54% DCS 45% Input/output matching 50 Ω internal Small outline 9.1 mm x 11.6 mm Low profile 1.50 mm ±10% Low APC current 60 µA The module consists a GSM900 PA block and a DCS1800 PA block, matching circuitry for 50 Ω input and output impedances, and bias control circuitry. Two separate Heterojunction Bipolar Transistor (HBT) PA blocks are fabricated on a single Gallium Arsenide (GaAs) die. One PA block operates in the GSM900 band and the other supports the DCS1800 band.