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SLP3N80C Datasheet N-channel MOSFET

Manufacturer: SL SEMI

Overview: SLP3N80C / SLF3N80C 800V N-Channel MOSFET General.

Datasheet Details

Part number SLP3N80C
Manufacturer SL SEMI
File Size 265.24 KB
Description N-Channel MOSFET
Datasheet SLP3N80C-SLSEMI.pdf

General Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Key Features

  • 3.0A, 800V, RDS(on) = 5.00Ω @VGS = 10 V.
  • Low gate charge ( typical 15nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
  • ◀▲ {G.
  • {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Sour.

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SLP3N80C Distributor