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Silan Microelectronics
SVF2N60CN/M/MJ/F/D_Datasheet
2A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF2N60CN/M/MJ/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
2
1
123
3
TO-251D-3L
1.Gate 2.Drain 3.Source
12 3
TO-251J-3L
12 3
TO-126-3L
2A,600V,RDS(on)(typ.)=3.