SVF2N60RD Datasheet | Silan Microelectronics

Silan Microelectronics SVF2N60RD/M/MJ_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60RD/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary FCellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. Features  2A,600V,RDS(on)(typ)=3.7@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt...