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Silan Microelectronics
SVF2N60RD/M/MJ_Datasheet
2A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF2N60RD/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary FCellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
2A,600V,RDS(on)(typ)=3.7@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
2
11
3
3 1.Gate 2. Drain 3.