SVF2N60F Datasheet | SL

Silan Microelectronics SVF2N60M/MJ/NF/F/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M(MJ)(NF)(F)(D) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. 1 23 TO-126F-3L 1.Gate 2.Drain 3.Source TO-252-2L 1 23 TO-251D-3L Features - 2A,600V,RDS(on)(typ.)=3.7@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability 12 3 TO-251J-3L 12 3 TO-220F-3L ORDERING INFORMATION Part No. SVF2N60M SVF2N60MJ SVF2N60NF SVF2N60F SVF2N60DTR Package Type TO-251D-3L TO-251J-3L TO-126F-3L TO-220F-3L TO-252-2L Marking SVF2N60M SVF2N60MJ SVF2N60NF SVF2N60F SVF2N60D Hazardous substance control Halogen free Halogen free Pb free Pb free Halogen free Packing Type Tube Tube Tube Tube Tape&Reel HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:3.6 Page 1 of...