Download the SVF2N60F datasheet PDF.
This datasheet also covers the SVF2N60M variant, as both devices belong to the same 600v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
SVF2N60M(MJ)(NF)(F)(D) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.
Full PDF Text Transcription for SVF2N60F (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SVF2N60F. For precise diagrams, and layout, please refer to the original PDF.
Silan Microelectronics SVF2N60M/MJ/NF/F/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 SVF2N60M(MJ)(NF)(F)(D) is an N-channel enhancement mode power MOS fiel...
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SVF2N60M(MJ)(NF)(F)(D) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. 1 1 23 3 TO-126F-3L 1.Gate 2.Drain 3.Source 13 TO-252-2L 1 23 TO-251D-3L FEATURES 2A,600V,RDS(on)(typ.)=3.
SVF2N60F Datasheet
