Download the SVF2N60FG datasheet PDF.
This datasheet also covers the SVF2N60MG variant, as both devices belong to the same 600v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
SVF2N60M/MG/MJ/N/NF/F/FG/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.
Full PDF Text Transcription for SVF2N60FG (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SVF2N60FG. For precise diagrams, and layout, please refer to the original PDF.
SVF2N60M/MG/MJ/N/NF/F/FG/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M/MG/MJ/N/NF/F/FG/T/D is an N-channel enhancement mode power MOS field effect ...
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N/NF/F/FG/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 2A,600V,RDS(on)(typ.)=3.7Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOME
SVF2N60FG Datasheet
