SVF2N60T Description
2 SVF2N60M(MJ)(NF)(F)(D) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely...
SVF2N60T Key Features
- 2A,600V,RDS(on)(typ.)=3.7@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability