• Part: A09T
  • Description: N-Channel SOT-23 Plastic-Encapsulate MOSFET
  • Category: MOSFET
  • Manufacturer: SLS SEMICONDUCTOR
  • Size: 448.75 KB
Download A09T Datasheet PDF
SLS SEMICONDUCTOR
A09T
A09T is N-Channel SOT-23 Plastic-Encapsulate MOSFET manufactured by SLS SEMICONDUCTOR.
阻低; 用途/Applications: 用于一般开关和低压电源电路。 极限参数/Absolute maximum ratings(Ta=25℃) 参数/Parameter 漏极-源极电压/Drain-Source Voltage 栅极-源极电压/Gate-Source Voltage 漏极电流(持续)/Continuous Drain Current 耗散功率/Power Dissipation 热阻/ Thermal Resistance Junction to Ambient 结温/Junction Temperature 储存温度/Storage Temperature 符号/ Symbol VDS VGS ID PD RθJA Tj Tstg 数值/Value 30 ±12 5.8 0.35 350 150 -55~150 单位/Unit V V A W ℃/m W ℃ ℃ SLS SEMICONDUCTOR (SHENZHEN) CO.,LTD. SOT-23 封装半导体场效应管/SOT-23 Plastic-Encapsulate MOSFETS 电性能参数/Electrical characteristics (Ta=25℃) 参数 符号 测试条件 最小值 典型值 最大值 单位 静态/Static Characteristics 源极-漏极击穿电压 VBR(DSS) VGS=OV,ID=250μA 栅极开启电压 VGS(th) ID=250μA, VGS=VDS 栅极漏电流 IGSS VGS=±12V,VDS=0V 零栅压漏极电流...
A09T reference image

Representative A09T image (package may vary by manufacturer)