JXND A09T
SOT-23 Plastic Encapsulate MOSFETS
| Part No. | A09T |
|---|---|
| Datasheet | A09T Download |
| Manufacturer | JXND |
| Description | SOT-23 Plastic Encapsulate MOSFETS |
| Buy | Stock & Price |
MAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current Maximum Power Dissipation 2) Pulsed Drain Current 1) Operating Junction and Storage Temperature Range Storage Temperature Range Thermal Resistance Junction-Ambient Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. 3) The above data are for reference only. TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol V(BR)DSS VGS ID PD IDM TJ Tstg RθJA Limit 30 ±12 5.0 4.1 1.5 0.9 20 150 -50 to 150 100 Unit V A W A oC oC oC/W JXND ELECTRONICS CO.,LTD SOT-23 Plastic Encapsulate MOSFETS AO3400 MOSFETELECTRICAL CHARACTERISTICS
(Ta=25 ℃ unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Off Characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250uA 30 IDSS VDS = 30V,VGS = 0V 1 Zero gate voltage drain current IDSS VDS =24V,VGS = 0V 100 Units V uA uA Gate-source leakage current IGSS VGS =±12V,...
