A09T Datasheet | DCY

Description DM3400DI 20V N-Channel Enhancement Mode MOSFET The DM3400DI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =3.2A RDS(ON) < 56mΩ @ VGS=10V （Type：45mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack DM3400DI SOT23L Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID ID IDM PD RθJA TJ, TSTG Continuous Drain Current TA = 25℃ Continuous Drain Current TA = 100℃ Pulsed Drain Current Power Dissipation TA = 25℃ Thermal Resistance, Junction to Case Operating and Storage Temperature Range Marking A09T Max. 20 ±12 3.2 2 12 0.77 162 -55 to +150 .dcy-china. Qty(PCS)...