DESCRIPTION
DM3400DI 20V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 20V ID =3.2A RDS(ON) < 56mΩ @ VGS=10V （Type：45mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack DM3400DI SOT23L ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID ID IDM PD RθJA TJ, TSTG Continuous Drain Current TA = 25℃ Continuous Drain Current TA = 100℃ Pulsed Drain Current Power Dissipation TA = 25℃ Thermal Resistance, Junction to Case Operating and Storage Temperature Range Marking A09T Max. 20 ±12 3.2 2 12 0.77 162 -55 to +150 Qty(PCS) 3000 Units V V A A A W ℃/W ℃ 1 DM3400DI 20V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Units V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID=250μA 20 22 - V IDSS IGSS VGS(th) Zero Gate Voltage Drain Current Gate to...
