Datasheet4U Logo Datasheet4U.com

A09T - 20V N-Channel Enhancement Mode MOSFET

General Description

The DM3400DI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 20V ID =3.2A RDS(ON) < 56mΩ @ VGS=10V （Type：45mΩ）.

📥 Download Datasheet

Datasheet Details

Part number A09T
Manufacturer DCY
File Size 1.05 MB
Description 20V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet A09T Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
A09T 30V N-CHANNEL MOSFET OSEN
A09T SMD PLASTIC-ENCAPSULATE MOSFET NextGen
A09T N-Channel SOT-23 Plastic-Encapsulate MOSFET SLS SEMICONDUCTOR
A09T MOSFET Kingtronics
A09T SOT-23 Plastic Encapsulate MOSFETS JXND

Other Datasheets by DCY

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Description DM3400DI 20V N-Channel Enhancement Mode MOSFET The DM3400DI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =3.