S3M0040120N Overview
S3M0040120N is single SiC Power MOSFET packaged in SOT-227 case. The device is a high voltage n-channel Enhancement mode MOSFET that has very low total conduction losses and very stable switching characteristics over temperature extremes. The S3M0040120N is ideal for energy sensitive, high frequency applications in challenging environments.
S3M0040120N Key Features
- Positive temperature characteristics, easy to parallel
- Low on-resistance Typ. RDS(on) = 40mΩ
- Fast switching speed and low switching losses
- Very fast and robust intrinsic body diode
- Process of non-bright Tin electroplatin
S3M0040120N Applications
- Positive temperature characteristics, easy to parallel