ST5100 Datasheet | SMC Diode

Features - 150 °C TJ operation - Center tap configuration - Ultralow forward voltage drop - High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance - High frequency operation - Guard ring for enhanced ruggedness and long term reliability - Trench MOS Schottky technology - This is a Pb - Free Device - All SMC parts are traceable to the wafer lot - Additional testing can be offered upon request STD5100 STF5100 TO-220AC D2PAK DPAK Maximum Ratings: Characteristics Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Peak One Cycle Non-Repetitive Surge Current Symbol VRRM VRWM VR IF (AV) IFSM Condition - 50% duty cycle @Tc=130°C, rectangular wave form 8.3ms, Half Sine pulse, TC = 25 °C ITO-220AC Max. 100 5 120 Units V A A Technical Data Data Sheet N1052, Rev. B Electrical Characteristics: Characteristics Forward Voltage Drop- Reverse Current- Junction Capacitance - Pulse width < 300 µs, duty cycle < 2% Symbol VF1 VF2 IR1 IR2 CT Condition @ 2.5A, Pulse, TJ = 25 °C @ 5A, Pulse, TJ = 25 °C @ 2.5A, Pulse, TJ = 125 °C @ 5A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C f SIG = 1MHz ST5100 STB5100 STD5100...