SDR9910P Datasheet | SSDI

Features : - - - - - - - - - - Ultra Fast Recovery: 60 nsec typical High Surge Rating Low Reverse Leakage Current Low Forward Voltage Drop Low Junction Capacitance Hermetically Sealed Package Gold Eutectic Die Attach available Ultrasonic Aluminum Wire Bonds Ceramic Seals for improved hermeticity available TX, TXV, Space Level Screening Available Consult Factory. Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage SDR998N&P SDR999N&P SDR9910N&P SDR9911N&P SDR9912N&P Symbol VRRM VRWM VR Io Value 800 900 1000 1100 1200 50 Units Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25ºC)note 1 Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA = 25ºC)note 2 Operating & Storage Temperature Maximum Thermal Resistance Junction to End Tab, note 1 Note 1: Pins 2&3 connected Note 2: High surge ratings available Amps IFSM Amps Top & Tstg RθJE -65 to +200 0.5 ºC ºC/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0117B Solid State Devices, Inc. 14701 Firestone Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. SDR998N&P thru SDR9912N&P Symbol IF = 50Adc IF = 100Adc IF = 50Adc IF = 50Adc VF1 VF2 IR1 IR2 CJ TA = 25ºC trr Electrical Characteristics Instantaneous Forward Voltage Drop (TA = 25ºC, 300 µsec pulse) Instantaneous Forward Voltage Drop (TA = -55ºC, 300 µsec pulse) (TA = 100ºC, 300 µsec pulse) Reverse Leakage Current (Rated VR, TA = 25ºC, 300 µsec pulse minimum) Reverse Leakage Current (Rated VR, TA = 100ºC, 300 µsec pulse minimum) Junction Capacitance (VR = 10 Vdc, TA = 25ºC, f = 1MHz) Reverse Recovery Time (IF = 500 m A, IR = 1A, IRR = 0.25A) Case Outline: TO-258 Pin1: Cathode Pin2: Anode Pin3: Anode Min - -...