SFF1310M Datasheet | SSDI

FEATURES : - Rugged construction with polysilicon gate - Low RDS (on) and high transconductance - Excellent high temperature stability - Very fast switching speed - Fast recovery and superior dv/dt performance - Increased reverse energy capability - Low input and transfer capacitance for easy paralleling - Hermetically sealed package - TX, TXV, and Space Level screening available - Replaces: SMM40N20 Type MAXIMUM RATINGS CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Operating and Storage Temperature Thermal Resistance, Junction to Case Total Device Dissipation @ TC = 25o C @ TC = 55o C SYMBOL VDS VGS ID Top & Tstg R 2 JC PD VALUE 200 ±20 40 -55 to +150 0.5 250 190 o UNIT Volts Volts Amps o C/W Watts PACKAGE OUTLINE: TO-3 PIN OUT: DRAIN: SOURCE: GATE: PIN 1 PIN 2 PIN 3 NOTE: All specifications are subject to change without notification. SCDs for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0004A .. SFF1310M SFF1310Z PRELIMINARY SOLID STATE DEVICES, INC. 14830 Valley View Av. - La Mirada, Ca 90670 Phone: (562) 404-7855 - Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS @ TJ =25o C (Unless Otherwise Specified) RATING Drain to Source Breakdown Voltage (VGS =0 V, ID =250:A) Drain to Source ON State Resistance (VGS = 10 V, 60% of Rated ID) ID = 37.5A SYMBOL BVDSS RDS(on) ID(on) VGS(th) g fs MIN 200 50 2.0 20 TYP 25 190 35 95 28 38 110 30 1.5 4400 800 285 MAX 0.050 UNIT V S A V S(É) ON State Drain Current (VDS > ID(on) x RDS(on) Max, VGS = 10 V) Gate Threshold Voltage (VDS =VGS, ID = 4m A) Forward Transconductance (VDS > ID(on) x RDS (on) Max, IDS = 50% rated ID) Zero Gate Voltage Drain Current VDS = max rated Voltage, TA = 25o C (VGS = 0V) VDS = 80% rated VDS, TA = 125o C Gate to Source Leakage Forward Gate to Source Leakage Reverse 4.0 250 1000 +100 -100 220 50 120 35 40 130 35 1.50 225 - I DSS IGSS Qg Qgs Qgd td (on) tr td (off) tf VSD :A n A At rated VGS VGS = 10 V 50% rated VDS 50% rated...