SSDI SFF1310Z
N-Channel Power MOSFET
FEATURES
:● Rugged construction with polysilicon gate
● Low RDS (on) and high transconductance
● Excellent high temperature stability
● Very fast switching speed
● Fast recovery and superior dv/dt performance
● Increased reverse energy capability
● Low input and transfer capacitance for easy paralleling
● Hermetically sealed package
● TX, TXV, and Space Level screening available
● Replaces: SMM40N20 Type
MAXIMUM RATINGS
CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Operating and Storage Temperature Thermal Resistance, Junction to Case Total Device Dissipation @ TC = 25oC @ TC = 55oC SYMBOL VDS VGS ID Top & Tstg R 2 JC PD VALUE 200 ±20 40 -55 to +150 0.5 250 190 o UNIT Volts Volts Amps o C C/W Watts PACKAGE OUTLINE: TO-3 PIN OUT: DRAIN: SOURCE: GATE: PIN 1 PIN 2 PIN 3 NOTE: All specifications are subject to change without notification. SCDs for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0004A SFF1310M SFF1310Z PRELIMINARY SOLID STATE DEVICES, INC.